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| (R) BUF420M HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s s STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION LOW BASE-DRIVE REQUIREMENTS APPLICATIONS: s SWITCH MODE POWER SUPPLIES s MOTOR CONTROL DESCRIPTION The BUF420M is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capacity. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. The BUF series is designed for use in high-frequency power supplies and motor control applications. 1 2 TO-3 (version "R") INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CEV V CEO V EBO IC I CM IB I BM P tot T stg Tj Parameter Collector-Emitter Voltage (V BE = -1.5V) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T c = 25 o C Storage Temperature Max. Operating Junction Temperature Value 850 450 7 30 60 6 9 275 -65 to 200 200 Unit V V V A A A A W o o C C March 2002 1/8 BUF420M THERMAL DATA R thj-case Thermal Resistance Junction-Case Max 0.63 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CER I CEV IEBO Parameter Collector Cut-off Current (R BE = 5 ) Collector Cut-off Current (V BE = -1.5V) Emitter Cut-off Current (I C = 0) Test Conditions V CE = 850 V V CE = 850 V V CE = 850 V V CE = 850 V V EB = 5 V I C = 200 mA L = 25 mH 450 T C = 100 o C T C = 100 o C Min. Typ. Max. 0.2 1 0.2 1 1 Unit mA mA mA mA mA V V CEO(sus) Collector-Emitter Sustaining Voltage (I B = 0) V EBO VCE(sat) Emitter Base Voltage (I C = 0) Collector-Emitter Saturation Voltage I E = 50 mA IC IC IC IC IC IC IC IC = = = = = = = = 10A 10 A 20 A 20 A 10A 10 A 20 A 20 A IB IB IB IB IB IB IB IB = = = = = = = = 1 1 4 4 1 1 4 4 A A A A A A A A 7 0.8 T C =100 o C 0.5 T C =100 o C 0.9 T C =100 o C 1.1 T C =100 o C 100 70 150 2.1 8 1.1 4 1 0.05 0.08 2 0.1 0.18 500 1.5 1.5 2 2.8 V V V V V V V V V A/s A/s A/s V V V V s s s s s s V V BE(sat) Base-Emitter Saturation Voltage di c /dt Rate of rise on-state Collector Current V CC = 300 V I B1 = 1.5 A I B1 = 1.5 A I B1 = 6 A V CC = 300 V I B1 = 1.5 A I B1 = 1.5 A V CC = 300 V I B1 = 1.5 A I B1 = 1.5 A I C = 10 A V BB = - 5 V V clamp = 400 V L = 0.25 mH I C = 10 A V BB = - 5 V V clamp = 400 V L = 0.25 mH I C = 10 A V BB = - 5 V I B1 = 1 A T C =125 o C I C = 10 A V BB = 0 V clamp = 400 V L = 0.25 mH RC = 0 t p = 3 s T C =25 o C T C =100 o C T C =100 o C R C = 60 T C =25 o C T C =100 o C R C = 60 T C =25 o C T C =100 o C V CC = 50 V R BB = 0.6 I B1 = 1 A V CC = 50 V R BB = 0.6 I B1 = 1 A T C =100 o C V CC = 50 V R BB = 0.6 L = 0.25 mH V CC = 50 V R BB = 0.15 I B1 = 1 A V CE (3s) Collector-Emitter Dynamic Voltage Collector-Emitter Dynamic Voltage INDUCTIVE LOAD Storage Time Fall Time Cross Over Time INDUCTIVE LOAD Storage Time Fall Time Cross Over Time Maximum Collector Emitter Voltage without Snubber INDUCTIVE LOAD Storage Time Fall Time Cross Over Time V CE (5s) ts tf tc ts tf tc V CEW ts tf tc 1.5 0.04 0.07 s s s 2/8 BUF420M ELECTRICAL CHARACTERISTICS (continued) Symbol ts tf tc V CEW Parameter INDUCTIVE LOAD Storage Time Fall Time Cross Over Time Maximum Collector Emitter Voltage without Snubber INDUCTIVE LOAD Storage Time Fall Time Cross Over Time INDUCTIVE LOAD Storage Time Fall Time Cross Over Time Maximum Collector Emitter Voltage without Snubber Test Conditions I C = 10 A V BB = 0 V clamp = 400 V L = 0.25 mH I C = 10 A V BB = 0 I B1 = 1 A T C =125 o C I C = 20 A V BB = -5 V V clamp = 400 V L = 0.12 mH I C = 20 A V BB = - 5 V V clamp = 400 V L = 0.12 mH I CWoff = 30 A V BB = - 5 V L = 0.12 mH T C =125 o C V CC = 50 V R BB = 0.15 I B1 = 1 A T C =100 o C V CC = 50 V R BB = 0.15 L = 0.25 mH V CC = 50 V R BB =0.6 I B1 = 4 A V CC = 50 V R BB = 0.6 I B1 = 4 A T C =125 o C V CC = 50 V R BB = 0.6 I B1 = 6 A 400 500 Min. Typ. Max. 3 0.15 0.25 Unit s s s V ts tf tc ts tf tc V CEW 2.2 0.06 0.12 3.5 0.12 0.3 s s s s s s V 3/8 BUF420M DC Current Gain DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Forward Biased Safe Operating Area Reverse Biased Safe Operating Area 4/8 BUF420M Storage Time Versus Pulse Time. Figure 1: Inductive Load Switching Test Circuit. 1) Fast electronic switch 2) Non-inductive Resistor 3) Fast recovery rectifier 5/8 BUF420M Turn-on Switching Test Waveforms. Turn-off Switching Test Waveforms (inductive load). 6/8 BUF420M TO-3 (version R) MECHANICAL DATA mm MIN. A B C D E G N P R U V 30.10 3.88 10.9 16.9 26.2 4.09 39.50 1.185 0.152 0.96 TYP. 11.7 1.10 1.70 8.7 20.0 0.429 0.665 1.031 0.161 1.555 0.037 MAX. MIN. inch TYP. 0.460 0.043 0.066 0.342 0.787 MAX. DIM. P G A D C U V O N R B P003N 7/8 E BUF420M Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 8/8 |
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